A technical paper titled “Programmable phase change materials and silicon photonics co-integration for photonic memory applications: a systematic study” was published by researchers at Colorado State University, CEA-LETI, and UC Berkeley.
Find the technical paper here. August 2024.
“We delve into the performance comparison of PCM-based programmable photonic memory cells based on silicon photonic and silicon nitride platforms using known PCMs (GST and GSST) for photonic memory applications while showcasing the fundamental limitations related to each design in terms of the maximum number of bits that they can store as well as their optical insertion loss. Moreover, we present comprehensive design-space exploration for analyzing the energy efficiency and cooling time of the photonic memory cells depending on the structure of the heat source,” states the paper.
Shafiee, Amin, Benoit Charbonnier, Jie Yao, Sudeep Pasricha, and Mahdi Nikdast. “Programmable phase change materials and silicon photonics co-integration for photonic memory applications: a systematic study.” Journal of Optical Microsystems 4, no. 3 (2024): 031208-031208.
