Nexperia extends its ‘ASFETs for Hotswap and Soft Start’ portfolio with the introduction of 10 new 25 V and 30 V fully optimized devices, combining industry-leading enhanced safe operating area (SOA) performance with extremely low RDS(on), making them ideal for use in 12 V hotswap applications including data center servers and communications equipment.
For several years, Nexperia has been combining proven MOSFET expertise and broad application understanding to develop market-leading ASFETs, devices in which critical MOSFET performance characteristics are enhanced to meet the requirements of particular applications. Since the launch of ASFETs, success has been seen with products optimized for battery isolation, DC motor control, Power-over-Ethernet, automotive airbag applications and more.
In-rush currents can present a reliability challenge in hotswap applications. Nexperia, the original pioneer of enhanced SOA MOSFETs, has addressed this concern by designing a portfolio of ‘ASFETs for Hotswap and Soft Start with enhanced SOA’ that are fully optimized for such applications. The PSMNR67-30YLE ASFET delivers 2.2x stronger SOA (12 V @100 mS) than previous technologies while having an RDS(on) (max) as low as 0.7 mΩ. The Spirito effect (represented by the steeper downward slope found on SOA curves at higher voltages) has been eliminated, while exceptional performance is maintained across the full voltage and temperature range (compared to unoptimized devices).
Nexperia further supports designers by removing the need to thermally de-rate designs, by fully characterizing these new devices at 125 °C and providing hot SOA datasheet curves.
With eight new devices (three 25 V and five 30 V) available in a choice of LFPAK56 & LFPAK56E packages with RDS(on) ranging from 0.7 mΩ to 2 mΩ, the majority of hotswap and soft start applications are addressed. Two additional 25 V products (which will have an even lower RDS(on) of 0.5 mΩ) are planned for release over the coming months.
Reprinted with permission.